Tu Kou | R&d Dept. Chino-excel Technology Corp.
スポンサーリンク
概要
関連著者
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Cheng Ching
R&d Dept. Chino-excel Technology Corp.
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Tu Kou
R&d Dept. Chino-excel Technology Corp.
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Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
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Su Shih
R&d Dept. Chino-excel Technology Corp.
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Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
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Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
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CHENG Ching-Ling
R&D Dept., Chino-Excel Technology Crop.
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TU Kou-Way
R&D Dept., Chino-Excel Technology Corp.
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SU Shin-Tzung
R&D Dept., Chino-Excel Technology Corp.
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SU Shih-Tzung
R&D Dept., Chino-Excel Technology Crop.
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CHIEN Feng-Tso
Dept. of Electronic Engineering, Feng Chia University
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Chien Feng-Tso
R&D Dept. Chino-Excel Technology Corp.
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Lai Ming
R&d Dept. Chino-excel Technology Corp.
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Fang Chin-mu
Dept. Of Electronic Engineering Feng-chia University
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LAI Ming-Hung
R&D Dept., Chino-Excel Technology Crop.
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Yin Jin-Mu
Dept. of Electronic Engineering, Feng Chia University
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Chien Feng
Dept. of Electronics Engineering, National Chiao Tung University
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LAI Ming
R&D Dept., Chino-Excel Technology Corp.
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SU Shih
R&D Dept., Chino-Excel Technology Corp.
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TU Kou
R&D Dept., Chino-Excel Technology Corp.
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CHENG Ching
R&D Dept., Chino-Excel Technology Corp.
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Yin Jin-mu
Dept. Of Electronic Engineering Feng Chia University
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Chien Feng
Dept. Of Electronic Engineering Feng-chia University
著作論文
- High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
- InGaP/InGaAs DCFETs with Drain and Source Recess Process
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
- A Novel Power MOSFET Structure with Split P-well and Split Poly Design
- A Novel Power MOSFET Structure with Split P-well and Split Poly Design