A Novel Power MOSFET Structure with Split P-well and Split Poly Design

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概要

• 論文の詳細を見る

• A noble high breakdown Power MOSFET structure with split p-well and split poly has been proposed and discussed. A fullsimulation combines device simulator 'MEDICI' and process simulator 'TSUPREM-4' to develop this device has also been presented. Floating guard rings and field plate technologies are used to provide a device with a breakdown voltage of 450V. Split p-well with a heavy p+ region design can relocate the breakdown point as well as decrease the bipolar effect, and therefore improve device avalanche breakdown characteristics. Split ploy with proper implant technology can reduce JFET effect, and the on resistance of Power MOSFET can be reduced. In addition, the gate charge performance can be reduced to half of the original design. Combining split p-well and split poly design of Power MOSFT, the performance of this device can be further improved.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• CHIEN Feng-Tso

  Dept. of Electronic Engineering, Feng Chia University

• Cheng Ching

  R&d Dept. Chino-excel Technology Corp.

• CHENG Ching-Ling

  R&D Dept., Chino-Excel Technology Crop.

• SU Shin-Tzung

  R&D Dept., Chino-Excel Technology Corp.

• TU Kou-Way

  R&D Dept., Chino-Excel Technology Corp.

• Tu Kou

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng‐tso

  Dep. Of Electronic Engineering Feng Chia University

• Su Shih

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng-tso

  The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un

• Fang Chin-mu

  Department Of Electronic Engineering Feng-chia University

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