Cheng Ching | R&d Dept. Chino-excel Technology Corp.

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著作論文

High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
InGaP/InGaAs DCFETs with Drain and Source Recess Process
High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
A Novel Power MOSFET Structure with Split P-well and Split Poly Design
A Novel Power MOSFET Structure with Split P-well and Split Poly Design

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