SU Shih-Tzung | R&D Dept., Chino-Excel Technology Crop.
スポンサーリンク
概要
関連著者
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SU Shih-Tzung
R&D Dept., Chino-Excel Technology Crop.
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Cheng Ching
R&d Dept. Chino-excel Technology Corp.
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CHENG Ching-Ling
R&D Dept., Chino-Excel Technology Crop.
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Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
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Su Shih
R&d Dept. Chino-excel Technology Corp.
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Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
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Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
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TU Kou-Way
R&D Dept., Chino-Excel Technology Corp.
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Chien Feng-Tso
R&D Dept. Chino-Excel Technology Corp.
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Tu Kou
R&d Dept. Chino-excel Technology Corp.
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SU Shin-Tzung
R&D Dept., Chino-Excel Technology Corp.
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LAI Ming-Hung
R&D Dept., Chino-Excel Technology Crop.
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Lai Ming
R&d Dept. Chino-excel Technology Corp.
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Fang Chin-mu
Dept. Of Electronic Engineering Feng-chia University
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CHIEN Feng-Tso
Dept. of Electronic Engineering, Feng Chia University
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HSIN Yue-ming
Department of Electrical Engineering, National Central University
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Su Shih-tzung
R&d Dept Chino-excel Technology Corp.
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Chien Feng-tso
R&d Dept Chino-excel Technology Corp.
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Cheng Ching-lin
R&d Dept Chino-excel Technology Corp.
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Hsin Yue-ming
Department Of Electrical Engineering National Central University
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CHENG Ching-Lin
R&D DEPT., Chino-Excel Technology Corp.
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TU Kao-Way
R&D DEPT., Chino-Excel Technology Corp.
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CHIEN Tuo-Hsin
R&D DEPT, Chino-Excel Technology Corp.
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DUNG Jen-Huei
R&D DEPT, Chino-Excel Technology Corp.
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Tu Kao-way
R&d Dept Chino-excel Technology Corp.
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Dung Jen-huei
R&d Dept Chino-excel Technology Corp.
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Chien Tuo-hsin
R&d Dept Chino-excel Technology Corp.
著作論文
- A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
- A Novel HBT with Composite Collector for Power Amplifier Application