A Noble Capacitive-Peaking Transimpedance Amplifier with High Linearity Gain Active Feedback Design
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Chien Feng-Tso
R&D Dept. Chino-Excel Technology Corp.
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Chien Feng-tso
R&d Dept Chino-excel Technology Corp.
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Cheng Ching-lin
R&d Dept Chino-excel Technology Corp.
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CHENG Ching-Lin
R&D DEPT., Chino-Excel Technology Corp.
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TU Kao-Way
R&D DEPT., Chino-Excel Technology Corp.
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Tu Kao-way
R&d Dept Chino-excel Technology Corp.
関連論文
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- A Noble Capacitive-Peaking Transimpedance Amplifier with High Linearity Gain Active Feedback Design
- A Novel HBT with Composite Collector for Power Amplifier Application
- High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure