High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films
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概要
- 論文の詳細を見る
- 2005-04-30
著者
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Wang Shui-jinn
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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Liou Bor-wen
Department Of Computer Science And Information Engineering Wu-feng Institute Of Technology
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CHEN Tron-Min
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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CHEN Shiue-Lung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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UANG Kai-Ming
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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CHANG Shu-Cheng
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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WU Chin-Kun
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Wu Chin-kun
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chen Shiue-lung
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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- A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate
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- High-Power GaN-Based Light-Emitting Diodes with Transparent Indium Zinc Oxide Films