The Role of High-$\kappa$ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
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概要
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In this study, we demonstrate the role of a titanium hafnium oxide (TiHfO) gate dielectric in improving the overall electronic performance of a ZnO thin-film transistor (TFT). TixHf1-xO ($x = 0.63$) was fabricated by the rf co-sputtering technique. Using TiHfO as the gate dielectric, the device fabricated in this study exhibits a threshold voltage of 0.34 V, a subthreshold swing of 0.23 V/dec, a field-effect mobility of 2.1 cm2 V-1 s-1, and an ON/OFF current ratio of $10^{5}$. The small subthreshold swing and low positive threshold voltage are attributed to the higher value of $\kappa$ of 40 for the dielectric. This result enables device operation below 2 V, allowing its use in low-power driving circuits in display applications.
- 2010-04-25
著者
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Su Nai-chao
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Albert Chin
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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Chien-Hung Wu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Chen-Kuo Chiang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Hao-Yuan Huang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Yu-Han Chen
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Huang Chin-Chuan
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Shui-Jinn Wang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Albert Chin
Department of Electronics Engineering, National Chiao-Tung University, University System of Taiwan, No. 1001, University Rd., Hsinchu, Taiwan 300, R.O.C.
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Chin-Chuan Huang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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