Improved Radio Frequency Power Characteristics of Complementary Metal–Oxide–Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal–Oxide–Semiconductor Transistor
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概要
- 論文の詳細を見る
We have characterized and modeled the radio frequency (RF) power performance of a 0.18 μm asymmetric-lightly-doped-drain metal–oxide–semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 μm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-03-25
著者
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Chang Tsu
Department Of Biochemistry National Defense Medical Center
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Albert Chin
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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CHEN Y.
Department of Applied Analysis, State University of New York
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Kao Hsuan-ling
Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, R.O.C.
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Hsuan-ling Kao
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
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Kao Hsuan-Ling
Department of Electronic Engineering, Chang Cung University, Tao-Yuan 333, Taiwan, R.O.C.
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Y. J.
Department of Electronics Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan
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