A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes
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概要
- 論文の詳細を見る
A dicing-free substrate technology was proposed and demonstrated to simplify the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs) using a Sn-based solder screen printing technique with patterned laser lift-off technology. As compared with conventional sapphire substrate GaN-based LEDs, VM-LEDs with an effective emission area of $1000\times 1000$ μm2 were found to have a 0.38 (0.87) V reduction in forward voltage at 350 (700) mA. In addition, their enhancement in light output power in the current range of 350–700 mA was found to successively increase from 55 to 76%. By considering these results, the power conversion efficiency of VM-LEDs was found to be 2.14 times that of regular LEDs at 700 mA.
- 2010-04-25
著者
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Der-Ming Kuo
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Tron-Min Chen
Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Wei-Chi Lee
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Pei-Ren Wang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Kai-Ming Uang
Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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Shui-Jinn Wang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Shui-Jinn Wang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, University Rd., Tainan, Taiwan 701, R.O.C.
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Hon-Yi Kuo
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Po-Hung Wang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Kai-Ming Uang
Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi, Taiwan, Republic of China
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Tron-Min Chen
Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi, Taiwan, Republic of China
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- A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes
- Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods