WANG Pei-Ren | Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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概要
- 同名の論文著者
- Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung Universityの論文著者
関連著者
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WANG Pei-Ren
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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CHEN Tron-Min
Department of Electrical Engineering, Wu-Feng Institute of Technology
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Wang Shui-jinn
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Kuo Der-ming
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng Institute of Technology, Chia-yi Country 621, Taiwan, Republic of China
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LEE Wei-Chi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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WANG Pei-Ren
Institute of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ.
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WANG Po-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Wang Shui-jinn
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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CHEN Tron-Min
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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UANG Kai-Ming
Dept. of Electrical Eng., Wu-Feng Institute of Technology
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CHEN Shiue-Lung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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KUO Hon-Yi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Kuo Hon-yi
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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Chen Shiue-lung
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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TSAI Ching-Chung
Institute of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ.
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KUAN Hon
Optoelectronics Center of Far East Univ.
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Chen Tron-min
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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Uang Kai-ming
Dept. Of Electrical Eng. Wu Feng Institute Of Technology
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Tsai Ching-chung
Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.
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Chen Tron-Min
Department of Electrical Engineering, WuFeng University, Chia-yi Country 621, Taiwan, Republic of China
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Chen Tron-Min
Department of Electrical Engineering, WuFeng University, Chia-yi Country, Taiwan 621, R.O.C.
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng University, Chia-yi Country 621, Taiwan, Republic of China
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Uang Kai-Ming
Department of Electrical Engineering, WuFeng University, Chia-yi Country, Taiwan 621, R.O.C.
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Lee Wei-Chi
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Wang Shui-Jinn
Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Kuo Der-Ming
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Wang Pei-Ren
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Wang Pei-Ren
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Wang Shui-Jinn
Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701, R.O.C.
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Wang Po-Hung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
著作論文
- A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
- Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
- Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium--Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate
- Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium--Zinc Oxide Current Spreading Layer