Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO3 Films at Low Temperatures
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概要
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(Pb,Sr)TiO3 (PST) films were deposited on Pt/SiO2/Si by pulsed laser deposition at low substrate temperatures ($T_{\text{s}}$) ranging from 300 to 450 °C. The loss in remnant polarization ($P_{\text{r}}$) and coercive field ($E_{\text{c}}$) is found to be less than 17% after $10^{10}$ switching cycles when $T_{\text{s}}$ is higher than 350 °C. It is also suggested that the leakage current is reduced when $T_{\text{s}}$ increases up to a temperature of 400 °C. However, PST films deposited at 450 °C may produce serious Pb–O volatilization, resulting in the deterioration of the crystallinity and high leakage currents. As a result, the 400 °C-deposited PST film reveals the lowest leakage current, nearly fatigued-free $J$–$E$ characteristics after $10^{10}$ switching cycles, and the best breakdown property, attributed to the enhanced crystallinity and low concentration of defects.
- 2007-01-15
著者
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Wang Jyh-liang
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Shye Der-chi
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lai Yi-sheng
Department Of Materials Science And Engineering National Cheng Kung University
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Cheng Huang-chung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University
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Tsai Chun-chien
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Juan Chuan-ping
Department Of Electrical Engineering St. John's University
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Tseng Huai-yuan
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Tseng Huai-Yuan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
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Shye Der-Chi
Department of Electronics Engineering, Mingchi University of Technology, Taipei 24301, Taiwan
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Lai Yi-Sheng
Department of Materials Science and Engineering, National United University, Miaoli 36003, Taiwan
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Juan Chuan-Ping
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
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Tsai Chun-Chien
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
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Wang Jyh-Liang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
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