Characterization of Tantalum Pentoxide Dielectric Films Grown by Low-Pressure and Plasma-Enhanced Chemical Vapor Deposition
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概要
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The material properties as well as the electrical behavior of tantalum pentoxide (Ta2O5) thin films prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD), in the same reactor, were studied. Ta2O5 films were grown on Si and Pt substrates by reacting pentaethoxy tantalum [Ta(OC2H5)5] with oxygen and were annealed in an oxygen furnace at 700$^\circ$C or oxygen plasma at 350$^\circ$C@. Scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), capacitance–voltage ($C$–$V$) and current–voltage ($I$–$V$) measurements were employed to characterize the Ta2O5 films before and after annealing. Compared to the LPCVD Ta2O5 film, the PECVD Ta2O5 film deposited at an rf power of 80 W exhibited a denser structure and better dielectric characteristics. Oxygen plasma annealing further densified the Ta2O5 films and improved their electrical performance on either Si or Pt substrate, without deteriorating the substrate materials.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-07-15
著者
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Lai Yi-sheng
Department Of Materials Science And Engineering National Cheng Kung University
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Lai Yi-Sheng
Department of Materials Science and Engineering, National Cheng Kung University, 70101, Tainan, Taiwan, R.O.C.
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Chen Jen
Department of Materials Science and Engineering, National Cheng Kung University, 70101, Tainan, Taiwan, R.O.C.
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Chen Jeo
Department of Materials Science and Engineering, National Cheng Kung University, 70101, Tainan, Taiwan, R.O.C.
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