A Quasi-Planar Thin Film Field Emission Diode

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概要

• 論文の詳細を見る

• A novel quasi-planar thin-film field emitter is fabricated by thin-film deposition and wet etching processes. The spacing between the emitters and collectors could be well controlled on the basis of the thicknesses of Cr thin films, which create submicron gaps. A forming process increases emitter surface roughness and results in a higher field enhancement factor, which shows better field emission characteristics. The turn-on voltage (at which the current level is 100 nA) of the device with a Cr thin film thickness of 300 nm is as low as 12 V, and the current fluctuation in 1 hour test at a driving voltage of 20 V represents a variation from $-86$ to +114%.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-11-15

著者

• CHEN Hsia-Wei

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Juan Chuan-ping

  Department Of Electrical Engineering St. John's University

• Lin Kao-chao

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Lai Rui-ling

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Lai Rui-Ling

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Syu Yu-Ying

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Cheng Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Juan Chuan-Ping

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

• Lin Kao-Chao

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan 300, R.O.C.

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