Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes

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概要

• 論文の詳細を見る

• The density distribution of CNTs is one of the crucial parameters determing the field-emission property of CNTs. To effectively control the density of CNTs, an inactive thin-film layer was deposited on a catalyst. The results showed that improved field emission property could be obtained with a thin SiO layer on the catalyst layer as the precursor. For 3.5 nm Fe and 3.5 nm SiO on 3.5 nm Fe as a catalyst, the turn-on field could be decreased from 3.7 V/μm. to 2.2 V/μm and the field-emission current density increased from $2.6\times 10^{-8}$ A/cm2 to $2.4\times 10^{-4}$ A/cm2 when the applied field was 4 V/μm

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-01-15

著者

• Wang Wen-pin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Li-chyong

  Center For Condensed Matter Sciences National Taiwan University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Tsai Chun-chien

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Kuei-hsien

  Institute Of Atomic And Molecular Sciences Academia Sinica

• Hsieh Chen-yu

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Kao-chao

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Lai Rui-ling

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Chen Kuo-ji

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lai Rui-Ling

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hong Wei-Kai

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• Wang Wen-Pin

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Juan Chuall-Ping

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hsieh Chen-Yu

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Juan Chuan-Ping

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chen Kuei-Hsien

  Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan, R.O.C.

• Tsai Chun-Chien

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lin Kao-Chao

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hong Wei-Kai

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

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