Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy : Structure and Mechanical and Thermal Properties of Condensed Matter

概要

論文の詳細を見る
The effects of reactant-gas velocity on the growth of InN on GaN/sapphire substrate by organometallic vapor-phase epitaxy (OMVPE) were studied. With a high-speed reactant gas, the thickness of the stagnant layer is reduced so that the reactant species can reach the surface effectively. A layerlike growth of InN was achieved, resulting in a marked improvement of the film quality. In addition, significant enhancement of the growth rate up to 2 μm/h was obtained. The full-width at half maximum (FWHM) of the X-ray rocking curve (XRC) decreased with increasing gas velocity. A 476 arcsec width of XRC was reproducibly achieved, indicating high-quality InN epitaxial films. A Hall mobility of 250cm^2/V-s with a carrier concentration of 1×10^<19>cm<-3> at room temperature was obtained on a 0.5-μm-thick InN film.
社団法人応用物理学会の論文
2002-11-15