Effects of High-Density Oxygen Plasma Posttreatment on Field Emission Properties of Carbon Nanotube Field-Emission Displays
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概要
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The effects of oxygen plasma posttreatment (PPT) on the morphology and field emission properties of carbon nanotube (CNT) arrays grown on silicon substrates are proposed and experimental results are reported. Oxygen PPT led to an enhancement in the emission properties of CNTs, which showed an increase in total emission current density and a decrease in turn-on field after plasma treatment. Scanning electron microscopy (SEM) images showed reduced densities of the CNTs, which resulted in a decrease of the screening effect in the electric field. Raman spectra showed an increase in the number of defects which served as field-emission sites when the plasma power or treatment time with the plasma increased. Transmission electron microscopy (TEM) images were used to identify the quality of the nanotubes, so that we could clearly find evidences of improvement in the field emission properties after plasma treatment. The measurement of electrical characteristics revealed improved field emission properties under proper plasma conditions. The turn-on field decreased from 4.8 to 2.5 V/μm, and the emission current density increased from 78.7 μA/cm2 to 18 mA/cm2 at an applied field of 5.5 V/μm.
- 2005-11-15
著者
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JUAN Chuan-Ping
Nano-Electronics and Display Technology Loboratory, Department of Electronics Engineering and Instit
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TSAI Chun-Chien
Nano-Electronics and Display Technology Loboratory, Department of Electronics Engineering and Instit
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CHENG Huang-Chung
Nano-Electronics and Display Technology Loboratory, Department of Electronics Engineering and Instit
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Chen Li-chyong
Center For Condensed Matter Sciences National Taiwan University
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Chen Kuei-hsien
Institute Of Atomic And Molecular Sciences Academia Sinica
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Cheng Huang-Chung
Nano-Electronics and Display Technology Loboratory, Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C.
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Juan Chuan-Ping
Nano-Electronics and Display Technology Loboratory, Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C.
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Chen Kuei-Hsien
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan, R.O.C.
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Tsai Chun-Chien
Nano-Electronics and Display Technology Loboratory, Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30010, Taiwan, R.O.C.
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