Reverse Annealing of Arsenic-Implanted Low-Pressure Chemical Vapor Deposition (LPCVD) Amorphous-Silicon Films

スポンサーリンク

概要

• 論文の詳細を見る

• The reverse annealing of arsenic-implanted amorphous-silicon films has been observed. The dose dependence of this phenomenon is also investigated. For the specimens implanted with the dosage of 4×10^<14> ion/cm^2, the sheet resistances show an increase in the annealing temperature range from 700 to 850℃, which is attributed to the segregation of the activated dopants to the grain boundaries. This reverse annealing phenomenon is less prominent and the turnaround temperature is lower for the implantation dosage of 2×10^<15> ion/cm^2, which is attributed to the effects of dopant segregation which decreases with increasing implantation dosage. Consequently, this reverse annealing phenomenon was not observed for the case of dosage of 1×10^<16> ion/cm^2.

• 社団法人応用物理学会の論文
• 1994-09-01

著者

• CHENG Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Tsai Meng-Jin

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Tsai Meng-jin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• WANG Fang-Shin

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Wang Fang-shin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

関連論文

• Microcrystalline SiC Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperatures
• A Quasi-planar Thin Film Field Emission Diode
• Improvement of Luminescent Uniformity via Synthesizing the Carbon Nanotubes on a Fe-Ti Co-deposited Catalytic Layer
• Improvement of Breakdown Field of Carbon Nanotubes by a Ti-Capping Layer on Catalyst Nanopaticles
• Constraining the Direction of Carbon Nanotubes by Oxide Capping Layer
• Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes
• Fabrication and Characterization of Lateral Field Emission Device Based On Carbon Nanotubes
• Fabrication and Characterization of lateral Field Emission Device Based on Carbon Nanotubes
• Improvement of Field Emission Characteristics of Carbon Nanotubes by Excimer Laser Treatment
• Fabrication and Characterization of Carbon Nanotube Triodes
• High-Performance LTPS-TFTs Fabricated by Continuous Wave Laser Annealing
• Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO_3 Films at Low Temperatures
• Field-Emission Properties of Aligned Carbon Nanotubes
• Fabrication and Characterization of Various Carbon-Clad Silicon Microtips with Ultra-Small Tip Radii
• Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects
• Charging Damages to Gate Oxides in a Helicon O_2 Plasma
• Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
• Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
• Fabrication and Characterization of the Pd-Silicided Emitters for Field-Emission Devices
• Characterization and Fabrication of Chimney-Shaped Metal Field Emitters
• Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays
• Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
• A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
• Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices
• Electrical Characteristics of Thirn-Film Transistors with Double-Active-Layer Structure
• A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration
• Low-Temperature Formation of Palladium Silicided Shallow p^+n Junctions Using Implant through Metal Technology
• Investigation of A 450V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal-Oxide-Semiconductor Fabrication by 12/25/5/40V Bipolar-Complementary Metal-Oxide-Semiconductor Double-Diffused Metal-Oxide-Semiconductor Process on Bulk Silicon Substrate
• Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
• Characterizing Trench-Gate Power Metal-Oxide-Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Investigation of a High Quality and Ultraviolet-Light Transparent Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film for Non-Volatile Memory Application
• Generalized Interconnect Delay Time and Crosstalk Models: II. Crosstalk-Induced Delay Time Deterioration and Worst Crosstalk Models : Semiconductors
• Generalized Interconnect Delay Time and Crosstalk Models: I. Applications of Interconnect Optimization Design : Semiconductors
• Integrated Tungsten Chemical Mechanical Polishing Process Characterization for Via Plug Interconnection in Ultralarge Scale Integrated Circuits
• Novel Technique to Form Pt-Silicided Shallow p^+n Junctions Using Low-Temperature Processes
• Effects of Vacancies on the Electrical Characteristics of Metal/GaAs Schottky Contacts "A Quantitative Model"
• Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing
• Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
• Enhanced Metalorganic Chemical Vapor Deposition Titanium Nitride Film Fabricated Using Tetrakis-Dimethylamino-Titanium for Barrier Metal Application in Sub-Half-Micron Technology
• Low-Temperature Process to Improve the Leakage Current of (Ba, Sr)TiO_3 Films on Pt/TiN/Ti/Si Substrates
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
• Effect of Temperature and Illumination on the Instability of a-Si:H Thin-Film Transistors under AC Gate Bias Stress : Semiconductors
• Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress
• The Instability Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Bias Stress
• The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States
• Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors Utilizing Nitrous Oxide Plasma
• Effects of Rapid Thermal Annealing on Cobalt Silicided p^+ poly-Si Gates Fabricated by BF^+_2 Implantation into Bilayered CoSi/a-Si Films
• High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
• High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
• Reverse Annealing of Arsenic-Implanted Low-Pressure Chemical Vapor Deposition (LPCVD) Amorphous-Silicon Films
• Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
• Investigation of A 450 V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal–Oxide– Semiconductor Fabrication by 12/25/5/40 V Bipolar-Complementary Metal–Oxide–Semiconductor Double-Diffused Metal–Oxide–Semiconductor Process on Bulk Silicon Substrate
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
• Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO3 Films at Low Temperatures
• The Reliability Improvements of Carbon Nanotubes Emitters by Utilizing an Fe–Ti Codeposited Catalyst
• High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel
• Dependence of Ferroelectric Characteristics on the Deposition Temperature of (Pb,Sr)TiO3 Films
• Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
• A Quasi-Planar Thin Film Field Emission Diode
• Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes
• Fabrication and Characterization of Carbon Nanotube Triodes
• Growth and Field Emission Characteristics of Carbon Nanotubes Using Co/Cr/Al Multilayer Catalyst
• Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
• Fabrication and Characterization of lateral Field Emission Device Based on Carbon Nanotubes
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures

もっと見る 閉じる

スポンサーリンク