Investigation of A 450V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal-Oxide-Semiconductor Fabrication by 12/25/5/40V Bipolar-Complementary Metal-Oxide-Semiconductor Double-Diffused Metal-Oxide-Semiconductor Process on Bulk Silicon Substrate

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-07-15

著者

• Chang Fang-long

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng H‐c

  National Tsing Hua Univ. Hsinchu Twn

• CHENG Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LIN Ming-Jang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LIAW C.

  Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University

• LIAO Ta-Chuan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

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