Chang Fang-long | Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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概要
- 同名の論文著者
- Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung Universityの論文著者
関連著者
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Chang Fang-long
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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LIAW Chorng-Wei
Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University
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Cheng Huang-chung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University
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CHENG Huang-Chung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIN Ming-Jang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Lin Ming-jang
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Cheng H‐c
National Tsing Hua Univ. Hsinchu Twn
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LIAW C.
Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University
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LEE Tsung-Hwang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Liaw Chorng-Wei
Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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LIAO Ta-Chuan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Liao Ta-chuan
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Jyh-Ling
Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan
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Lin Ming-Jang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lin Ming-Jang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Chen Huang-Jen
Department of Electronic Engineering, Huafan University, Shintin, Taipei 223, Taiwan
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Liaw C.
Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Lin Jyh-Ling
Department of Electronic Engineering, Huafan University, Shintin, Taipei 223, Taiwan
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Cheng Huang-Chung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
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Lee Tsung-Hwang
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Chang Fang-Long
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Chang Fang-Long
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Chang Fang-Long
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
著作論文
- Investigation of A 450V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal-Oxide-Semiconductor Fabrication by 12/25/5/40V Bipolar-Complementary Metal-Oxide-Semiconductor Double-Diffused Metal-Oxide-Semiconductor Process on Bulk Silicon Substrate
- Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
- Characterizing Trench-Gate Power Metal-Oxide-Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
- Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
- Investigation of A 450 V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal–Oxide– Semiconductor Fabrication by 12/25/5/40 V Bipolar-Complementary Metal–Oxide–Semiconductor Double-Diffused Metal–Oxide–Semiconductor Process on Bulk Silicon Substrate
- Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
- Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization