Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization

概要

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Low-temperature polycrystalline silicon (poly-Si) thin-film transistor lateral double-diffusion metal–oxide–semiconductor field-effect transistors (LTPS TFT LDMOSFETs) and lateral insulated-gate bipolar transistors (LIGBTs) were fabricated by combining a thin-film transistor with a power structure, three-step drift doping, and excimer laser annealing. The maximum breakdown voltage of the three-step drift-doped LTPS-LDMOS after excimer laser annealing is 286 V with a 35 μm drift region length ($L_{\text{drift}}$). The specific on-resistance is low (approximately 9 $\Omega$ cm2) and the ON/OFF current ratio is about $1.28 \times 10^{6}$ with $L_{\text{drift}} = 15$ μm. The subthreshold swing (SS) is about 1 V/decade. Comparing the three-step drift-doped LDMOS with the three-step drift-doped LIGBT under the same processing conditions clearly indicates that the breakdown voltage and current capacity of LIGBT exceeds those of LDMOS.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-03-25