Modeling and Characteristic Analysis of Silicon-on-Insulator Lateral-Double-Diffusion Metal Oxide Semiconductor

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概要

• 論文の詳細を見る

• A lateral-double-diffusion metal oxide semiconductor (LDMOSEFT) structure on a silicon-on-insulator (SOI) substrate is studied mainly in this paper. This device has good performance as shown by its low leakage current, low parasitic capacitance, low conduction power consumption, and high switch speed. In this research, the current–voltage relationship for LDMOSFET is derived, and an easy and simple equation including linear and saturation regions is presented. The parameters extracted from the DC test mainly include threshold voltage, breakdown voltage, and on-resistance at different temperatures ranging from 300 to 375 K.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-11-25

著者

• Lin Jyh-Ling

  Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan

• Lin Li-Jheng

  Department of Electronic Engineering, Huafan University, Shintin Taipei 223, Taiwan

• Lin Chen-I

  Institute of Mechatronic Engineering, Huafan University, Shintin Taipei 223, Taiwan

• Lin Chel-I

  Institute of Mechatronic Engineering, Huafan University, Shintin Taipei 223, Taiwan

関連論文

• Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress
• Structures of Anodized Aluminum Oxide Extended-Gate Field-Effect Transistors on pH Sensors
• Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
• Modeling and Characteristic Analysis of Silicon-on-Insulator Lateral-Double-Diffusion Metal Oxide Semiconductor

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