Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress

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概要

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• The superjunction lateral double diffusion metal oxide semiconductor field effect has recently received considerable attention. Introducing heavily doped p-type strips to the n-type drift region increases the horizontal depletion capability. Consequently, the doping concentration of the drift region is higher and the conduction resistance is lower than those of conventional lateral-double-diffusion metal oxide semiconductor field effect transistors (LDMOSFETs). These characteristics may increase breakdown voltage ($\mathit{BV}$) and reduce specific on-resistance ($R_{\text{on,sp}}$). In this study, we focus on the electrical characteristics of conventional LDMOSFETs on silicon bulk, silicon-on-insulator (SOI) LDMOSFETs and superjunction LDMOSFETs after bias stress. Additionally, the $\mathit{BV}$ and $R_{\text{on,sp}}$ of superjunction LDMOSFETs with different N/P drift region widths and different dosages are discussed. Simulation tools, including two-dimensional (2-D) TSPREM-4/MEDICI and three-dimensional (3-D) DAVINCI, were employed to determine the device characteristics.

• 2006-04-15

著者

• Lin Jyh-Ling

  Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan

• Lin Ming-Jang

  Anpec Electronics Corporation, No. 6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan

• Lin Ming-Jang

  ANPEC Electronics Corporation, Hsinchu, Taiwan, R.O.C.

• Lin Li-Jheng

  Department of Electronic Engineering, Huafan University, Shintin, Taipei 223, Taiwan

• Lin Li-Jheng

  Department of Electronic Engineering, Huafan University, Shintin Taipei 223, Taiwan

関連論文

• Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress
• Structures of Anodized Aluminum Oxide Extended-Gate Field-Effect Transistors on pH Sensors
• Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor
• P-Channel Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistor with Split N-Type Buried Layer for High Breakdown Voltage and Low Specific On-Resistance
• Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
• Modeling and Characteristic Analysis of Silicon-on-Insulator Lateral-Double-Diffusion Metal Oxide Semiconductor

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