Structures of Anodized Aluminum Oxide Extended-Gate Field-Effect Transistors on pH Sensors
スポンサーリンク
概要
- 論文の詳細を見る
The objective of this work is the study and characterization of anodized aluminum oxide as a pH sensor. Sensing films were fabricated by anodic oxidation, a process which is low cost, in which it is simple to manufacture and mass produce films at room temperature, in which it is easy to control the variation in film resistance. The films have a good linear sensitivity, approximately 56 mV/pH from pH 4 to 10 when an instrumentation amplifier is used as the read out circuit. This study indicates that the type of aluminum substrate affects the sensing characteristics. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis show that aluminum oxides on different aluminum substrates formed by anodic oxidation have various acid-base characteristics. Extended-gate field-effect transistor (EGFET) sensing films formed when the predominant surface plane of the aluminum oxide is (012) have a linear sensitivity.
- 2006-10-15
著者
-
Sun Tai-ping
Department Of Biology Duke University
-
Chin Yuan-lung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University En
-
Chu Yung-Ming
Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan
-
Lin Jyh-Ling
Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan
-
Hsaio Shih-Hua
Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan
-
Chin Yuan-Lung
Department of Electronic Engineering, HuaFan University, Shintin Taipei 223, Taiwan
-
Sun Tai-Ping
Department of Electrical Engineering, National Chi Nan University, Nantou 545, Taiwan
関連論文
- ジベレリン受容体のジベレリン識別とエフェクター認識
- 植物によるジベレリンの感知とシグナル伝達
- SnO_2 Thin Film Prepared By R.F. Reactive Sputtering For SnO_2/Si_3N_4/SiO_2 Gate ISFETs Applications
- Characteristics of Superjunction Lateral-Double-Diffusion Metal Oxide Semiconductor Field Effect Transistor and Degradation after Electrical Stress
- Structures of Anodized Aluminum Oxide Extended-Gate Field-Effect Transistors on pH Sensors
- Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
- Modeling and Characteristic Analysis of Silicon-on-Insulator Lateral-Double-Diffusion Metal Oxide Semiconductor