Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-12-15

著者

• Chang Fang-long

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng H‐c

  National Tsing Hua Univ. Hsinchu Twn

• CHENG Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LIN Ming-Jang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LEE Tsung-Hwang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LIAW Chorng-Wei

  Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University

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