Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-02-01
著者
-
LIOU Wan-Rone
Department of Electrical Engineering, National Taiwan Ocean University
-
Wang S‐j
National Chiao Tung Univ. Hsinchu Twn
-
Liou W‐r
Department Of Electrical Engineering National Taiwan Ocean University
-
Luo Ying-che
Department Of Electrical Engineering National Cheng Kung University
-
Cheng Ching-yuan
Department Of Electrical Engineering National Cheng Kung University
-
Liou Wan-rone
Department Of Electrical Engineering The National Taiwan Ocean University
-
Lin Jia-chuan
Department Of Electrical Engineering National Cheng Kung University
-
WANG Shui-Jinn
Department of Electrical Engineering, National Cheng Kung University
関連論文
- A Low-Voltage 4.6GHz Injection Locked Frequency Divider in Standard 1.8V 0.18μm Complementary-Metal-Oxide-Silicon Technology
- A Novel Current Control Pad for Electromagnetic Interference Solution
- Second Harmonic Generation in Barium Titanate Thin Films on Silica Glass by Corona Poling
- A Low-Voltage Complementary-Metal-Oxide-Silicon 4.4-GHz Voltage Control Oscillator Design
- The Study of Temperature Dependence of Second Harmonic Generation in Lead Lanthanum Titanate Thin Film by Corona Poling
- A 6.25-100MHz CMOS Clock Generator For Video Line-Locked
- Influences of Interface Roughness Scattering on Asymmetric and/or Steplike Current-Voltage Characteristics of Resonant Tunneling Diodes
- Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes
- High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
- Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method
- Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
- Analysis and Comparison of Polysilicon Contacted Ultra-Shallow Junction p^+ - and n^+ -poly Gate p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors by Two-Dimensional Simulation
- A Low-Voltage 4.6 GHz Injection Locked Frequency Divider in Standard 1.8 V 0.18 μm Complementary-Metal–Oxide–Silicon Technology
- A Low-Voltage Complementary-Metal–Oxide–Silicon 4.4-GHz Voltage Control Oscillator Design
- A Novel Current Control Pad for Electromagnetic Interference Solution
- Second Harmonic Generation in Barium Titanate Thin Films on Silica Glass by Corona Poling
- The Study of Temperature Dependence of Second Harmonic Generation in Lead Lanthanum Titanate Thin Film by Corona Poling