Reduction of Donor-like Interface Traps of n-Type Metal–Oxide–Semiconductor Field-Effect-Transistors Using Hydrogen-Annealed Wafer and In-situ HF-Vapor Treatment
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概要
- 論文の詳細を見る
In this paper, n-type metal–oxide–semiconductor field-effect-transistors (nMOSFETs) of low donor-like interface traps are fabricated on hydrogen-annealed wafers (Hi-wafer) with an in-situ HF-vapor treatment. Gate oxide integrity is significantly improved in terms of drain current, transconductance, and threshold-voltage shift under stressing. We found the improvement is due to the significant reduction of donor-like interface trapping densities. This improvement becomes distinguished when both Hi-wafer and in-situ HF-vapor treatment are utilized.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
-
Yang Wen
Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan
-
Lin Yu
Department of Electrical Engineering, Feng Chia University, Taichung, Taiwan
-
Chao Tien
Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, Taiwan
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- Reduction of Donor-like Interface Traps of n-Type Metal–Oxide–Semiconductor Field-Effect-Transistors Using Hydrogen-Annealed Wafer and In-situ HF-Vapor Treatment
- Functional Structures of AgOx Thin Film for Near-Field Recording