Ultra-Shallow Junction Formation using Implantation through Capping Nitride Layer on Source/Drain Extension : Short Note
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-07-15
著者
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Jiang Yeu
Department Of Electrical Engineering National Chung-hsing University
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Kung Chung
Department Of Electrical Engineering National Chung-hsing University
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Chao Tien
Department Of Electrophysics National Chiac Tung University:nano Device Laboratories
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Chan Yi
Department Of Electrical Engineering National Central University
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HSIEN Li
Department of Electrical Engineering, National Chung-Hsing University
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Hsien Li
Department Of Electrical Engineering National Chung-hsing University
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Chan Yi
Department Of Electrical Engineering National Chung-hsing University
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Chao Tien
Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, Taiwan
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- Ultra-Shallow Junction Formation using Implantation through Capping Nitride Layer on Source/Drain Extension : Short Note
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