CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor(Electronic Circuits)

概要

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A high quality-factor of active inductor has been implemented by using the 0.18μm 1P6M CMOS technologies in this work. By adding a feedback resistance and a regulated gain stage transistor into the conventional cascade-grounded approach, the quality-factor and performance of CMOS active inductor can be improved. This novel active inductor demonstrated a maximum quality-factor of 540 and a 3.2nH inductance at 4.3GHz, where the self-resonant frequency was 5.4GHz. An active CMOS bandpass filter was also fabricated including this tunable high quality factor active inductor, performing an insertion loss of 0.2dB and a return loss more than 32dB with a tuning range from 3.45 GHz to 3.6 GHz. The input IP3 was -2.4dBm, and the noise figure was 14.1 dB with a 28mW dc power consumption.
社団法人電子情報通信学会の論文
2005-12-01