Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide

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概要

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• Room-temperature (30 °C) silicon dioxide (SiO2) has been grown on strained SiGe layers by liquid-phase deposition (LPD). Metal–oxide–semiconductor (MOS) capacitors have also been fabricated by annealing at various temperatures (200–400 °C) in nitrogen. A very low leakage current density of $3.25\times 10^{-8}$ A/cm2 was obtained at an electric field of 10 MV/cm for as-grown LPD-SiO2 films. After annealing, the leakage current density decreased by one order of magnitude and the fixed oxide charge density also significantly decreased to $4.7\times 10^{9}$ cm-2 in the capacitor annealed at 400 °C. The mechanism by which this occurred is explained.

• 2009-08-25

著者

• Kung Chung

  Department Of Electrical Engineering National Chung-hsing University

• Chen Yu

  Silicon Thin Film Solar Cell Project, Photovoltaics Technology Center, Industrial Technology Research Institute, Chutung, Hsinchu 31040, Taiwan, R.O.C.

• Hwang Jun

  Department of Applied Physics, National Chia Yi University, ChiaYi 60004, Taiwan, R.O.C.

• Chan Hsun

  Department of Electrical Engineering, Da-Yeh University, Da-Tsuen, Changhua, Taiwan, R.O.C.

• Chen Pan

  Department of Materials Science and Engineering, Ming-Hsin University of Science and Technology, Hsinchu 31040, Taiwan, R.O.C.

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