Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
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Lu Tseng-fu
Department Of Electronic Engineering Chang Gung University
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Lue Cheng-en
Nanya Technology Corporation
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Yang Chia-ming
Department Of Electronic Engineering Chang Gung University
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CHEN Chih-Hsin
Department of Electronic Engineering, Chang Gung University
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FANG Yu-Ching
Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
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HSU Li
Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
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WANG Hui-Chun
Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
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LEE Chung-Yuan
Nanya Technology Corporation
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WANG Ti-Chuan
Department of Electronic Engineering, Chang Gung University
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CHIN Chi-Hang
Department of Electronic Engineering, Chang Gung University
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LUE Cheng-En
Department of Electronic Engineering, Chang Gung University
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Wang Hui-chun
Chung-shan Institute Of Science & Technology Materials & Electro-optics Research Division
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Lue Cheng-en
Department Of Electronic Engineering Chang Gung University
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Fang Yu-ching
Chung-shan Institute Of Science & Technology Materials & Electro-optics Research Division
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Chen Chih-hsin
Department Of Electronic Engineering Chang Gung University
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Wang Ti‐chuan
Department Of Electronic Engineering Chang Gung University
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Hsu Li
Chung-shan Institute Of Science & Technology Materials & Electro-optics Research Division
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Wang Ti-chuan
Department Of Electronic Engineering Chang Gung University
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YANG Chia-Ming
Department of Electronic Engineering, Chang Gung University
関連論文
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- pH Sensing Performance and Electrical Characterization on Hafnium Oxide Gate ISFETs with Single and Dual Stack Insulator by RF Sputtering
- Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application
- Modifications on pH sensitivity of Si_3N_4 membrane by CF_4 plasma and rapid thermal annealing for ISFET/REFET applications
- Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing (Special Issue: Solid State Devices & Materials)
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- Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing
- Light-Immune pH Sensor with SiC-Based Electrolyte--Insulator--Semiconductor Structure