Reference Electrode--Insulator--Nitride--Oxide--Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application

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概要

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• We investigate a reference electrode--insulator--nitride--oxide--semiconductor (RINOS) structure with a Sm2O3 sensing membrane and using silicon nitride as the charge trapping layer for pH detection. The proposed RINOS device with the oxide--nitride--oxide (ONO) structure exhibits a high pH sensitivity (larger than the ideal Nernst response, ${\sim}59$ mV/pH) owing to hydrogen ion adsorption by the trapped electrons within the embedded Si3N4 layer when applying a stress voltage. As the applied voltage and time increase, pH sensitivity increased. The possible sensing mechanism based on charge attraction was demonstrated using schematic band diagrams. To improve the retention of an increased sensitivity, an additional SiO2 layer as a blocking layer between the Sm2O3 and Si3N4 films to form the RIONOS device was proposed. Compared with the conventional electrolyte--insulator--semiconductor (EIS) structure, the proposed RIONOS device can be used to detect ultra small pH variations owing to its high pH-sensing response.

• 2011-04-25

著者

• Lai Chao-sung

  Department Of Electronic Engineering Chang Gung University

• Lu Tseng-fu

  Department Of Electronic Engineering Chang Gung University

• Pan Tung-ming

  Department Of Electronic Engineering Chang Gung University

• Kao Chyuan-haur

  Department Of Electronic Engineering Chang Gung University

• Wang Jer-chyi

  Department Of Electronic Engineering Chang Gung University

• Yang Chia-Ming

  Inotera Memories, Inc., Kweishan, Taoyuan 333, Taiwan

• Shih Hui-Yu

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan

• Yang Chia-Ming

  Inotera Memories, Inc., 667 Fu-Hsing 3rd Road, Hwa-Ya Technology Park, Kweishan 333, Taoyuan, Taiwan

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