Chemical Sensing Properties of Electrolyte/SiGe/SiO2/Si Structure

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概要

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• To investigate the surface properties of silicon germanium (SiGe) as a chemically sensitive membrane, SiGe layers deposited at Si2H6 and GeH4 ambience by low-pressure chemical-vapor-deposition (LPCVD) at 475 °C were prepared. First, the effect of ac measuring frequency on capacitance–voltage ($C$–$V$) curves obtained from a SiGe electrolyte–insulator–semiconductor (EIS) structure was studied. The pH sensitivity of SiGe-EIS structure was 59.8 mV/pH, calculated from reference voltages in the pH range from 10 to 2. A voltage shift was observed in the same pH buffer solution for different measurement loops. To analyze the depth profile of a SiGe membrane, Auger electron spectroscopy (AES) was used. The formation of a native oxidation layer on the surface of SiGe was observed, and the layer had a thickness of 20 Å.

• 2006-08-15

著者

• Lai Chao-sung

  Department Of Electronic Engineering Chang Gung University

• Yang Chia-ming

  Department Of Electronic Engineering Chang Gung University

• Wang Ti-chuan

  Department Of Electronic Engineering Chang Gung University

• Wang Chih-yao

  Department Of Electronic Engineering Chang Gung University

• Wang Chih-Yao

  Department of Electronic Engineering, Chang Gung University, 333, Tao-Yuan, Taiwan

• Pijanowska Dorota

  Institute of Biocybernetics and Biomedical Engineering, Polish Academy of Sciences, Warsaw, Poland

• Yang Chia-Ming

  Department of Electronic Engineering, Chang Gung University, 333, Tao-Yuan, Taiwan

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