Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNz Metal Gate Electrodes

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概要

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• The negative bias temperature instability (NBTI) characteristics of p-channel metal oxide semiconductor field effect transistor (pMOSFET) devices with novel HfxMoyNz metal gates have been investigated for the first time. The threshold voltage ($V_{\text{th}}$) shift, subthreshold swing (SS), off-leakage current, and field effect mobility ($\mu_{\text{FE}}$) were found to be degraded after NBTI stress. The possibility of nitrogen diffusing to the oxide is increased by employing a higher N2 ratio during HfxMoyNz deposition. The higher nitrogen content in HfxMoyNz metal gates shows threshold voltage ($V_{\text{th}}$) shift, subthreshold swing (SS), off-leakage current, and field effect mobility ($\mu_{\text{FE}}$) degradation. The degradation of threshold voltage ($V_{\text{th}}$), subthreshold swing (SS), off-leakage current, and field effect mobility ($\mu_{\text{FE}}$) are believed to be due to the interface states and fixed oxide charges generation from the broken Si–H bonds at the SiO2/Si interface. Furthermore, the mechanism of NBTI degradation has been suggested by a physical model and an energy band diagram.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Lai Chao-sung

  Department Of Electronic Engineering Chang Gung University

• Fan Kung-ming

  Department Of Electronic Engineering Chang Gung University

• Peng Hsing-kan

  Department Of Electronic Engineering Chang Gung University

• Lin Shian-jyh

  Nanya Technology Corp. Technology Process Development Department

• Peng Hsing-Kan

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan

• Fan Kung-Ming

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan

• Lin Shian-Jyh

  Nanya Technology Corporation, Hwa-Ya Technology Park, 669 Fu-Hsing 3rd Rd, Kueishan, Tao-Yuan, Taiwan

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