Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing
スポンサーリンク
概要
- 論文の詳細を見る
Hafnium oxide (HfO2) was directly deposited on silicon as a sensing dielectric by RF sputtering. This combination was proposed to replace the HfO2/SiO2 stacked structure. The characterizations of HfO2 sensing dielectrics of various thicknesses were widely investigated using post-rapid thermal annealing (RTA) treatments at various temperatures and process times. The pH sensitivity of a 30-nm-thick HfO2 sensing dielectric was 49.2 mV/pH, almost the same as the traditional HfO2/SiO2 stacked electrolyte–insulator–semiconductor (EIS) structure. The verified minimum thickness for a HfO2 sensing dielectric was 4 nm. The ion sensing performance of HfO2-EIS, pH sensitivity, and drift voltage were all improved by RTA treatment. With 900 °C RTA, pH sensitivities can be improved and approach 59.6 mV/pH for all thicknesses of HfO2 sensing dielectric. HfO2 sensing dielectrics with 900 °C RTA are verified as good hydrogen ion sensing materials.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
-
Lu Tseng-fu
Department Of Electronic Engineering Chang Gung University
-
Yang Chia-ming
Department Of Electronic Engineering Chang Gung University
-
Yang Chia-Ming
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan
-
Lu Tseng-Fu
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan
関連論文
- Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode
- Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode
- pH Sensing Performance and Electrical Characterization on Hafnium Oxide Gate ISFETs with Single and Dual Stack Insulator by RF Sputtering
- Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application
- Modifications on pH sensitivity of Si_3N_4 membrane by CF_4 plasma and rapid thermal annealing for ISFET/REFET applications
- Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing (Special Issue: Solid State Devices & Materials)
- Thickness Effects on pH Response of HfO_2 Sensing Dielectric Improved by Rapid Thermal Annealing
- In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF_4 Plasma
- Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN_x/SiO_2 and TiN_x/HfO_2 Gate Stacks
- Ion Polarity Dependent Voltage Shifts of SiGe Membrane for pH Sensor
- Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition
- Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors
- Reference Electrode--Insulator--Nitride--Oxide--Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application
- Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary HfxMoyNz Metal Gate and Gd2O3 High-$k$ Gate Dielectric
- Light Addressable Potentiometric Sensor with Fluorine-Terminated Hafnium Oxide Layer for Sodium Detection
- High-$k$ HfxGdyOz Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
- Chemical Sensing Properties of Electrolyte/SiGe/SiO2/Si Structure
- Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory
- Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck
- pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte--Insulator--Semiconductor Sensor with Rapid Thermal Annealing
- Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
- Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNz Metal Gate Electrodes
- Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing
- Light-Immune pH Sensor with SiC-Based Electrolyte--Insulator--Semiconductor Structure