Ion Polarity Dependent Voltage Shifts of SiGe Membrane for pH Sensor

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Lai Chao-sung

  Department Of Electronic Engineering Chang Gung University

• Yang Chia-ming

  Department Of Electronic Engineering Chang Gung University

• WANG Ti-Chuan

  Department of Electronic Engineering, Chang Gung University

• WANG Chih-Yao

  Department of Electronic Engineering, Chang Gung University

• Wang Ti‐chuan

  Department Of Electronic Engineering Chang Gung University

• Wang Ti-chuan

  Department Of Electronic Engineering Chang Gung University

• Wang Chih-yao

  Department Of Electronic Engineering Chang Gung University

関連論文

• Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode
• Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode
• pH Sensing Performance and Electrical Characterization on Hafnium Oxide Gate ISFETs with Single and Dual Stack Insulator by RF Sputtering
• Novel inorganic pH-insensitive membrane prepared by post N_2O plasma treatment on conventional Si_3N_4/SiO_2 stack layer for REFET application
• Modifications on pH sensitivity of Si_3N_4 membrane by CF_4 plasma and rapid thermal annealing for ISFET/REFET applications
• Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing (Special Issue: Solid State Devices & Materials)
• Thickness Effects on pH Response of HfO_2 Sensing Dielectric Improved by Rapid Thermal Annealing
• In-Situ Fluorinated Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors (TFT) with Low Trapping and Off Current by CF_4 Plasma
• Nitrogen Induced Extrinsic States (NIES) in Effective Work Function Instability of TiN_x/SiO_2 and TiN_x/HfO_2 Gate Stacks
• Ion Polarity Dependent Voltage Shifts of SiGe Membrane for pH Sensor
• Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition
• Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors
• Reference Electrode--Insulator--Nitride--Oxide--Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application
• Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary HfxMoyNz Metal Gate and Gd2O3 High-$k$ Gate Dielectric
• Light Addressable Potentiometric Sensor with Fluorine-Terminated Hafnium Oxide Layer for Sodium Detection
• High-$k$ HfxGdyOz Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
• Chemical Sensing Properties of Electrolyte/SiGe/SiO2/Si Structure
• Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory
• Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck
• pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte--Insulator--Semiconductor Sensor with Rapid Thermal Annealing
• Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
• Negative Bias Temperature Instability of p-Channel Metal Oxide Semiconductor Field Effect Transistor with Novel HfxMoyNz Metal Gate Electrodes
• Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing
• Light-Immune pH Sensor with SiC-Based Electrolyte--Insulator--Semiconductor Structure

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