Yang Chia-Ming | Inotera Memories, Inc., Kweishan, Taoyuan 333, Taiwan
スポンサーリンク
概要
関連著者
-
Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
-
Lu Tseng-fu
Department Of Electronic Engineering Chang Gung University
-
Wang Jer-chyi
Department Of Electronic Engineering Chang Gung University
-
Yang Chia-Ming
Inotera Memories, Inc., Kweishan, Taoyuan 333, Taiwan
-
Yang Chia-Ming
Inotera Memories, Inc., 667 Fu-Hsing 3rd Road, Hwa-Ya Technology Park, Kweishan 333, Taoyuan, Taiwan
-
Lue Cheng-en
Department Of Electronic Engineering Chang Gung University
-
Pan Tung-ming
Department Of Electronic Engineering Chang Gung University
-
Kao Chyuan-haur
Department Of Electronic Engineering Chang Gung University
-
Lai Chao-Sung
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Chin Chi-Hang
Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
-
Chuang Hao-Chun
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Kuo Pei-Chun
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Shih Hui-Yu
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan
-
Lu Tseng-Fu
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
-
Lu Tseng-Fu
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
-
Yang Jung-Hsiang
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
-
Li Sheng-Shian
Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
-
Lai Chao-Sung
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
-
Yang Chia-Ming
Inotera Memories, Inc., Taoyuan, Taiwan 333, R.O.C.
-
Lue Cheng-En
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
著作論文
- Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition
- Reference Electrode--Insulator--Nitride--Oxide--Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application
- Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition