Wang Jer-chyi | Department Of Electronic Engineering Chang Gung University
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概要
関連著者
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Wang Jer-chyi
Department Of Electronic Engineering Chang Gung University
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Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
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Lu Tseng-fu
Department Of Electronic Engineering Chang Gung University
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Yang Chia-Ming
Inotera Memories, Inc., 667 Fu-Hsing 3rd Road, Hwa-Ya Technology Park, Kweishan 333, Taoyuan, Taiwan
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Yang Chia-Ming
Inotera Memories, Inc., Kweishan, Taoyuan 333, Taiwan
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Lue Cheng-en
Department Of Electronic Engineering Chang Gung University
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Pan Tung-ming
Department Of Electronic Engineering Chang Gung University
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Kao Chyuan-haur
Department Of Electronic Engineering Chang Gung University
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Lin Chih-ting
Department Of Electronic Engineering Chang Gung University
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Huang Po-wei
Department Of Electronic Engineering Chang Gung University
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Shih Hui-Yu
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan
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Peng Hsing-kan
Department Of Electronic Engineering Chang Gung University
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FANG Yu-Ching
Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
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HSU Li
Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
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WANG Hui-Chun
Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division
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Chen Chia-hsin
Department Of Electronic Engineering Chang Gung University
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Hsing-Kan Peng
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, Taiwan
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Chia-Ming Yang
Wafer Acceptance Test & Device Department, Inotera Memories Inc., Taoyuan 333, Taiwan
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Ching-Mie Wu
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Taoyuan 333, Taiwan
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Lai Chao-Sung
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Chin Chi-Hang
Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
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Chuang Hao-Chun
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Kuo Pei-Chun
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Wang Hui-Chun
Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Lung-Tan, Tao-Yuan 32500, Taiwan
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Chou Pai-Chi
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan
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Wu Woei-Cherng
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan
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Liu Li-Chi
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan
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Lai Chao-Sung
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan
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Lu Tseng-Fu
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
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Lu Tseng-Fu
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Yang Jung-Hsiang
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
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Li Sheng-Shian
Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.
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Lai Chao-Sung
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
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Hsu Li
Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Lung-Tan, Tao-Yuan 32500, Taiwan
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Yang Chia-Ming
Inotera Memories, Inc., Taoyuan, Taiwan 333, R.O.C.
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Kao Chyuan-Haur
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan
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Pan Tung-Ming
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan
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Fang Yu-Ching
Chung-Shan Institute of Science and Technology, Materials and Electro-Optics Research Division, Lung-Tan, Tao-Yuan 32500, Taiwan
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Lu Tseng-Fu
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan
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Lue Cheng-En
Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.
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Ye Yu-Ren
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
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Huang Po-Wei
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
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Chen Yu-Yen
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
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Chang Li-Chun
Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan
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Chang Jung
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
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Wu Chih-I
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China
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Lin Chih-Ting
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
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Wu Chih-I
Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
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Syu Jhih-Sian
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
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Wu Pin-Ru
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
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Wang Po-Sheng
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
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Wang Jer-Chyi
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kweishan 333, Taoyuan, Taiwan
著作論文
- Effects of CF4 Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2 Layer Grown by Atomic Layer Deposition
- Differential Light Addressable Potentiometric Sensor with Poly(vinyl chloride) and HfO2 Membranes for pH Sensors
- Reference Electrode--Insulator--Nitride--Oxide--Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application
- Threshold Voltage Tunability of p-Channel Metal Oxide Semiconductor Field-Effect Transistor with Ternary HfxMoyNz Metal Gate and Gd2O3 High-$k$ Gate Dielectric
- High-$k$ HfxGdyOz Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
- Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory
- pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte--Insulator--Semiconductor Sensor with Rapid Thermal Annealing
- Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2 Films Formed by Atomic Layer Deposition
- Performance Revelation and Optimization of Gold Nanocrystal for Future Nonvolatile Memory Application
- Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment