Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment
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概要
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The effects of remote NH<inf>3</inf>plasma treatment on a Pt/Gd<inf>x</inf>O<inf>y</inf>/W resistive random access memory (RRAM) metal--insulator--metal (MIM) structure were investigated. We found that a decrease in the electron barrier height caused by nitrogen incorporation at the Pt--Gd<inf>x</inf>O<inf>y</inf>interface can help reduce the operational set and reset voltages. Nitrogen atoms from the NH<inf>3</inf>plasma prevent oxygen atoms in the film from diffusing through Pt grain boundaries into the atmosphere, resulting in superior retention properties ({>}10^{4} s). The stability of the endurance behavior of Gd<inf>x</inf>O<inf>y</inf>RRAMs was significantly improved owing to the passivation of defects in Gd<inf>x</inf>O<inf>y</inf>films by nitrogen and hydrogen atoms from the remote NH<inf>3</inf>plasma, markedly reducing plasma damage.
- 2013-04-25
著者
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Wang Jer-chyi
Department Of Electronic Engineering Chang Gung University
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Ye Yu-Ren
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
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Chang Jung
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
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Wu Chih-I
Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China
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Wu Chih-I
Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
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Syu Jhih-Sian
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
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Wu Pin-Ru
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
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Wang Po-Sheng
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
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