Performance Revelation and Optimization of Gold Nanocrystal for Future Nonvolatile Memory Application

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概要

• 論文の詳細を見る

• The annealing effects on the gold nanocrystal (Au-NC) formation for memory application are proposed. At higher annealing temperatures, the memory window becomes larger owing to the high density of Au-NCs. The average size of the Au-NCs is approximately 5 nm, and the spaces between NCs tend to decrease with annealing temperature. Furthermore, the retention charge loss rate was optimized at 700 °C annealing formation and found to be dominated by the thermally activated and tunneling mechanisms. The high charge loss rate for the thermally activated mechanism shows no dependence on annealing temperature, while the low charge loss rate for the tunneling depends on the spaces between NCs. Besides, the activation energy of the thermally activated electron loss was low at a high Au-NC density, which can be attributed to the lateral electron migration between NCs. The endurance of the 700 °C annealed sample can sustain a memory window of approximately 1.1 V after 10^{4} program/erase cycles.

• 2013-04-25

著者

• Lin Chih-ting

  Department Of Electronic Engineering Chang Gung University

• Huang Po-wei

  Department Of Electronic Engineering Chang Gung University

• Wang Jer-chyi

  Department Of Electronic Engineering Chang Gung University

• Huang Po-Wei

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Chen Yu-Yen

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Chang Li-Chun

  Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan

• Lin Chih-Ting

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

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