A Novel High-k Y_2O_3 Sensing Membrane for pH-ISFET
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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PAN Tung-Ming
Department of Electronic Engineering, Chang Gung University
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Cheng Chih-hung
Department Of Electronic Engineering Chang Gung University
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Lin Zhao-wen
Department Of Electronic Engineering Chang Gung University
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Pan Tung-ming
Department Of Electronic Engineering Chang Gung University
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LIAO Kao-Ming
Department of Electronic Engineering, Chang Gung University
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LIN Jian-Chyi
Department of Electronic Engineering, Chang Gung University
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CHANG Chih-Jen
Department of Electronic Engineering, Chang Gung University
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Liao Kao-ming
Department Of Electronic Engineering Chang Gung University
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Lin Jian-chyi
Department Of Electronic Engineering Chang Gung University
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Chang Chih-jen
Department Of Electronic Engineering Chang Gung University
関連論文
- Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode
- A Novel High-k Y_2O_3 Sensing Membrane for pH-ISFET
- Reference Electrode--Insulator--Nitride--Oxide--Semiconductor Structure with Sm2O3 Sensing Membrane for pH-Sensor Application
- Physical and Electrical Properties of Addition Ti into Er_2O_3 Gate Dielectrics
- Population-Based Study on the Prevalence and Correlates of Orthostatic Hypotension/Hypertension and Orthostatic Dizziness
- pH Sensing Characterization of Programmable Sm2O3/Si3N4/SiO2/Si Electrolyte--Insulator--Semiconductor Sensor with Rapid Thermal Annealing