PAN Tung-Ming | Department of Electronic Engineering, Chang Gung University
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概要
関連著者
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PAN Tung-Ming
Department of Electronic Engineering, Chang Gung University
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Pan Tung-ming
Department Of Electronic Engineering Chang Gung University
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Wang Jer-chyi
Nanya Technology Corporation Hwa-ya Technology Park
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Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
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Fan Kung-ming
Department Of Electronic Engineering Chang Gung University
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Hong Jia-liang
Department Of Electronic Engineering Chang Gung University
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PENG Shing-Kan
Department of Electronic Engineering, Chang Gung University
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WONG Jian-Yi
Department of Electronic Engineering, Chang Gung University
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Cheng Chih-hung
Department Of Electronic Engineering Chang Gung University
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Hsu Wei-hao
Department Of Electronic Engineering Chang Gung University
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Lin Zhao-wen
Department Of Electronic Engineering Chang Gung University
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Peng Shing-kan
Department Of Electronic Engineering Chang Gung University
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LIAO Kao-Ming
Department of Electronic Engineering, Chang Gung University
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LIN Jian-Chyi
Department of Electronic Engineering, Chang Gung University
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CHANG Chih-Jen
Department of Electronic Engineering, Chang Gung University
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HUANG Chung-Chin
Department of Electronic Engineering, Chang Gung University
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HUANG Wei-Shiang
Department of Electronic Engineering, Chang Gung University
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HUANG Kuo-Chan
Department of Electronic Engineering, Chang Gung University
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Huang Chung-chin
Department Of Electronic Engineering Chang Gung University
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Liao Kao-ming
Department Of Electronic Engineering Chang Gung University
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Lin Jian-chyi
Department Of Electronic Engineering Chang Gung University
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Chang Chih-jen
Department Of Electronic Engineering Chang Gung University
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Huang Kuo-chan
Department Of Electronic Engineering Chang Gung University
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Huang Wei-shiang
Department Of Electronic Engineering Chang Gung University
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LAI Chao-Sung
Department of Electronic Engineering, Chang Gung University
著作論文
- Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode
- A Novel High-k Y_2O_3 Sensing Membrane for pH-ISFET
- Physical and Electrical Properties of Addition Ti into Er_2O_3 Gate Dielectrics