Effects of BCl3 Passivation on Pt/Al/n-InP Diodes
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概要
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High performance Schottky diodes formed with a BCl3 passivation layer on Pt/Al/n-InP are presented. The diode realizes a barrier height as high as 0.85 eV, and the reverse current density is $1.44 \times 10^{-6}$ A/cm2 at $-3$ V. Secondary ion mass spectroscopy for depth profiles measurements reveals the existence of B and Cl elements at the contact interface. The electron spectroscopy chemical analysis shows that the surface layer of the passivated InP substrate is composed of InPO4 and chloride. The improvement of the barrier height of Pt/Al/n-InP diode is presumably due to the formation of the aluminum oxide at the contact interface and due to the chlorine passivation on the interface states.
- 2003-01-15
著者
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Huang Wen
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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Lei Tan
Department Of Electronic Engineering National Chiao Tung University
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Lee Chung
Department Of Anesthesiology And Pain Medicine Asan Medical Center University Of Ulsan College Of Me
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Lei Tan
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Lee Chung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Huang Wen
Department of Electronic Engineering, Ta Hwa Institute of Technology, Hsinchu, Taiwan, R.O.C.
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