A Novel Shallow Trench Isolation Technique

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Chao T

  National Chiao Tung Univ. Hsinchu Twn

• Lei T

  National Chiao Tung Univ. Hsinchu Twn

• LEI Tan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• CHAO Tien

  National Nano Device Laboratories

• Chao T‐s

  Department Of Electrophysics National Chiao Tung University

• Chao Tien

  National Device Laboratory

• CHENG Juing-Yi

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Lei Tan

  Department Of Electronic Engineering National Chiao Tung University

• Cheng Juing-yi

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lei Tan.

  National Nano Device Laboratory:department Of Electronics Engineering And Institute Of Electronics N

• Cheng Juing-yi

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

関連論文

• The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Polysilicon
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• Thin Oxides Grown on Disilane-Based Polysilicon(Semiconductors)
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
• Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Improvement of Thin Oxides Thermally Grown on the Reactive-Ion-Etched Silicon Substrates
• The Characterization of Al_2O_3 Prepared by Anodic Oxidation
• Improvement of Reliability of MOSFET's with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Effects of Postetching Treatments on Electrical Characteristics of Thermal Oxides on Reactive-Ion-Etched Silicon Substrates
• Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
• Effects of BCl_3 Passivation on Pt/Al/n-InP Diodes
• Measurement of Thin Oxide Films on Implanted Si-Substrate by Ellipsometry
• Suppression of Boron Penetration in BF^+_2-Implanted Poly-Si Gate
• Suppression of Boron Penetration in P^+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
• A Novel Shallow Trench Isolation Technique
• A Novel Shallow Trench Isolation Technique
• Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P^+-Poly-Si Gate of PMOSFET's
• A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask
• Suppression of Boron Pemetration in PMOS by Using Oxide Gettering Effect in Poly-Si Gate
• Ellipsometric Measurements and its Alignment : Using the Intensity Ratio Technique
• Improvement of Ultra-Thin 3.3 nm Thick Oxide for Co-Salicide Process Using NF_3 Annealed Poly-Gate
• Optimum Conditions for Novel One-Step Cleaning Method for Pre-Gate Oxide Cleaning Using Robust Design Methodology
• Improvement of Polysilicon Oxide Integrity Using NF_3-Annealing
• Fourier Transform Infrared Spectroscopic Study of Oxide Films Grown in Pure N_2O
• The Characteristics of Polysilicon Oxide Grown on Amorphous Silicon Deposited from Disilane
• Effects of BCl3 Passivation on Pt/Al/n-InP Diodes
• Drain/Gate-Voltage-Dependent On-Current and Off-Current Instabilities in Polycrystalline Silicon Thin-Film Transistors under Electrical Stress
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing

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