Control of As Precipitation in Low-Temperature GaAs by Electronic and Isoelectronic Delta Doping

スポンサーリンク

概要

• 論文の詳細を見る

• A systematic study of electronic (Si and Be) and isoelectronic (In and Al) delta-doping effects on the formation of arsenic precipitates in GaAs grown by molecular beam epitaxy (MBE) at low substrate temperature is presented. Both electronic dopant Si and isoelectronic dopant In are found to accumulate As precipitates in postgrowth-annealed samples, while the precipitate accumulation effect is more prominent for Si than In. As precipitate is depleted from regions doped with Be or Al. The results suggest that the electronic property of impurity does not have a direct correlation with the As precipitation process. The effects of doping concentration and postgrowth annealing temperatures are also reported. The ability to control the As precipitates in low-temperature materials should lead to a wide variety of device applications.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• Chang Chun

  Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University

• Huang Jin

  Materials Science Center National Tsing-hua University

• Cheng Tzyy

  Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University

• Cheng Tzyy

  Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University

関連論文

• Arsenic Precipitate Accumulation in Alternately Si/Be Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
• The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
• Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• The Effect of D.C. Bias on the Synthesis of Crystalline Carbon Nitrides on Silicon by Microwave Plasma Enhanced Chemical Vapor Deposition (CVD)
• Control of As Precipitation in Low-Temperature GaAs by Electronic and Isoelectronic Delta Doping
• GaN Growth on Si(111) Using Simultaneous AlN/$\alpha$-Si3N4 Buffer Structure
• Lack of health risk awareness in low-income Chinese youth migrants : assessment and associated factors

スポンサーリンク