The Effect of D.C. Bias on the Synthesis of Crystalline Carbon Nitrides on Silicon by Microwave Plasma Enhanced Chemical Vapor Deposition (CVD)

スポンサーリンク

概要

• 論文の詳細を見る

• Crystalline carbon nitride compounds have been successfully deposited on a silicon wafer over an intermediate layer of Si_3N_4 formed by chemical conversion of the silicon using a microwave plasma enhanced chemical vapor deposition (MPECVD) process. Both nitrogen and methane were used as the primary precursors for the initial nitriding of silicon and the subsequent formation of crystalline carbon nitride. In the later step, a negative dc bias of -150V was applied to the nitrided silicon substrate. The crystalline carbon nitride compounds were characterized by X-ray diffractormeter and X-ray photoelectron spectroscopy, and compared to α- and β-Si_3N_4. It should be noted that crystalline carbon nitride has never been observed to form simply by reaction of solid carbon with nitrogen plasma. Application of a negative dc bias to the substrate has proved to be a prerequisite for the formation of carbon nitride in this study.

• 社団法人応用物理学会の論文
• 1998-02-01

著者

• Shih Han.

  Department Of Materials Science And Engineering National Tsing-hua University:institute Of Materials

• Huang Jin

  Materials Science Center National Tsing-hua University

• SUNG Shing

  Department of Materials Science and Engineering, National Tsing-Hua University

• TSAI Tzeng

  Department of Materials Science and Engineering, National Tsing-Hua University

• HUANG Kuen

  Institute of Materials Engineering, National Chung-Hsing University

• Huang Kuen

  Institute Of Materials Engineering National Chung-hsing University

• Sung Shing

  Department Of Materials Science And Engineering National Tsing-hua University

• Tsai Tzeng

  Department Of Materials Science And Engineering National Tsing-hua University

関連論文

• Arsenic Precipitate Accumulation in Alternately Si/Be Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
• The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
• The Effect of D.C. Bias on the Synthesis of Crystalline Carbon Nitrides on Silicon by Microwave Plasma Enhanced Chemical Vapor Deposition (CVD)
• Control of As Precipitation in Low-Temperature GaAs by Electronic and Isoelectronic Delta Doping

スポンサーリンク