Arsenic Precipitate Accumulation in Alternately Si/Be Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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Huang J
National Tsuing Hua Univ. Hsinchu Twn
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HSIEH Li
Department of Electrical Engineering, National Tsing Hua University
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HUANG Jin
Materials Science Center, National Tsing Hua University
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SU Zi
Department of Electrophysics, National Chiao Tung University
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WU Meng
Department of Electrical Engineering, National Tsing Hua University
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Su Zi
Department Of Electrophysics National Chiao Tung University
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Wu M
Department Of Electrical Engineering National Tsing Hua University
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Hsieh Li
Department Of Electrical Engineering National Tsing Hua University
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Huang Jin
Materials Science Center National Tsing-hua University
関連論文
- Arsenic Precipitate Accumulation in Alternately Si/Be Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
- The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
- The Effect of D.C. Bias on the Synthesis of Crystalline Carbon Nitrides on Silicon by Microwave Plasma Enhanced Chemical Vapor Deposition (CVD)
- Morphological Diagram of Bacterial Colony Pattern Simulated Using a Revised Mimura-Sakaguchi-Matsushita Model
- Control of As Precipitation in Low-Temperature GaAs by Electronic and Isoelectronic Delta Doping