Li Y | National Nano Device Labs.
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概要
関連著者
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Li Y
National Nano Device Labs.
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Li Ying
National Institute Of Information And Communications Technology
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MATSUBARA Kensuke
National Institute of Information and Communications Technology
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HAYASAKA Kazuhiro
National Institute of Information and Communications Technology
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HOSOKAWA Mizuhiko
National Institute of Information and Communications Technology
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ITO Hiroyuki
National Institute of Information and Communications Technology
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KAJITA Masatoshi
National Institute of Information and Communications Technology
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Huang C‐y
National Chiao Tung Univ. Hsinchu Twn
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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HUANG Tiao-Yuan
Department of Electronics Engineering, National Chiao Tung University
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Lee Y‐j
National Chiao Tung Univ. Hsinchu Twn
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NAGANO Shigeo
National Institute of Information and Communications Technology
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UETAKE Satoshi
National Institute of Information and Communications Technology
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Huang Chun-yang
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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CHAO Tien-Sheng
Department of Electrophysics, National Chiao Tung University
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LEE Yao-Jen
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIN Horng-Chih
National Nano Device Labs.
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LI Yiming
National Nano Device Labs.
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Huang T-y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lee Yao-jen
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Hosokawa M
Tohoku Univ. Sendai Jpn
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Nagano Shigeo
National Inst. Information And Communications Technol. Tokyo Jpn
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Matsubara Kensuke
National Institute of Advanced Industrial Science and Technology (AIST)
著作論文
- Frequency Measurement of the Optical Clock Transition of ^Ca^+ Ions with an Uncertainty of 10^ Level
- Precise Frequency-Drift Measurement of Extended-Cavity Diode Laser Stabilized with Scanning Transfer Cavity
- Preparing Single Ions in m=0 States in the Lamb-Dicke Regime
- Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors