Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements(Device, <Special Section>Analog Circuit and Device Technologies)
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概要
- 論文の詳細を見る
A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
- 社団法人電子情報通信学会の論文
- 2005-06-01
著者
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MENG Chinchun
Department of Communication Engineering, National Chiao Tung University
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Meng Chinchun
National Chiao Tung Univ. Hsinchu Twn
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Meng Chinchun
Department Of Communication Engineering National Chiao Tung University
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TSENG Sheng-Che
Department of Communication Engineering, National Chiao Tung University
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TSOU Bo-Chen
Department of Electrical Engineering, National Chung-Hsing University
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Tsou Bo-chen
Department Of Electrical Engineering National Chung-hsing University
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Tsou Bo‐chen
National Chung‐hsing Univ. Taichung Twn
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Tseng Sheng‐che
National Chiao Tung Univ. Hsinchu Twn
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Tseng Sheng-che
Department Of Communication Engineering National Chiao Tung University
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