The Leakage Current Conduction Mechanisms of Cu/Porous Silica Damascene Schemes with Nano-cluster TaSix Barrier

スポンサーリンク

概要

• 論文の詳細を見る

• Leakage current conduction mechanisms of Cu/porous silica damascene structures with TaSix (20 nm) barrier were investigated. Polycrystalline TaSi0.54 and nano-cluster TaSi0.42 barriers were prepared by dc sputtering with various power and pressure. The newly developed silica based slurry was employed for the metal-CMP of TaSix films. The incorporation of traditional NH4OH solution and megasonic were applied to perform post-CMP cleaning. Auger mapping revealed clearly straight Cu and Ta lines in these TaSix samples. The line-to-line leakage current density ($J_{\text{L}}$) was plotted versus the electric field ($E$) at various temperatures. The Ln($J_{\text{L}}$)–$(E)^{1/2}$ plots showed that Ln($J_{\text{L}}$) is linearly dependent on $(E)^{1/2}$, corresponding to Schottky emission mechanism. The slope of straight lines were determined from the data points of the Ln($J_{\text{L}}/T^{2}$)–($1000/T$) plots. It revealed the magnitude of barrier height. The maximum height of the potential barrier of nano-cluster TaSix/porous silica is about 0.12–0.30 eV. The bias-temperature-stress induced leakage current was measured for reliability study.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-01-15

著者

• Chen Chung-hsien

  Department Of Engineering And System Science National Tsing Hua University

• Chang Chin-Piao

  Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Huang Fon-Shan

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Chen Chung-Hsien

  Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Huang Fon-Shan

  Institute of Electronics Engineering, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan

関連論文

• Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
• Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
• Fabrication and Characterization of a Three-Dimensional Flexible Thermopile
• The Leakage Current Conduction Mechanisms of Cu/Porous Silica Damascene Schemes with Nano-cluster TaSix Barrier
• Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer

スポンサーリンク