Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
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概要
- 論文の詳細を見る
The blocking voltage in diode (i.e., PN junction) using neutron-transmutation-doped Si can be improved by a field oxide annealed in N2O. It is experimentally determined that the reverse breakdown voltage is clearly increased although the ideality factor and leakage current density increase slightly. The improvement of blocking voltage may be due to the replacement of strained Si–O bonds by Si–N bonds in the field oxide and/or the relaxation of SiO2/Si interfacial strain. The increase of the ideality factor and leakage current for N2O-annealed devices might be attributed to the increase of SiO2/Si interface states.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-06-15
著者
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Chang-liao Kuei-shu
Department Of Engineering And System Science National Tsing Hua University
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CHEN Chung-Hsien
Department of Engineering and System Science, National Tsing Hua University
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Chen Chung-hsien
Department Of Engineering And System Science National Tsing Hua University
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Chen Chung-Hsien
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
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